Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B

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Date: 2013-10-31 05:07:25 Chemistry Matter Nanoelectronics Nanowire Indium antimonide Metalorganic vapour phase epitaxy Indium Drop Vaporliquidsolid method		Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B Add to Reading List Source URL: kouwenhovenlab.tudelft.nl Download Document from Source Website File Size: 3,98 MB Share Document on Facebook

	Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B DocID: 1m0Uy - View Document
	TELEDYNE JUDSON TECHNOLOGIES A Teledyne Technologies Company Indium Antimonide Detectors DocID: 1lIS8 - View Document
	Supplementary Material: Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires S. Nadj-Perge, V. S. Pribiag, J. W. G. van den Berg, K. Zuo, S. R. Plissard, E. P. A. M. Bakkers, S. M. Frolov, L.P. Kouwenho DocID: 1lz8l - View Document
	Supplemental Material to ‘Fast spin-orbit qubit in an indium antimonide nanowire’ J.W.G. van den Berg,1 S. Nadj-Perge,1 V.S. Pribiag,1 S.R. Plissard,2 E.P.A.M. Bakkers,1, 2 S.M. Frolov,1 and L.P. Kouwenhoven1 1 DocID: 1lqkq - View Document
	TELEDYNE JUDSON TECHNOLOGIES A Teledyne Technologies Company Indium Antimonide Detectors DocID: 1kQwE - View Document