3-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency - Indium arsenide - Document - PDFSEARCH.IO

First Page	Meta Content
	3-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency Add to Reading List Document Date: 2013-11-21 18:46:20 Open Document File Size: 1,67 MB Share Result on Facebook

UPDATE

3-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency Add to Reading List