The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond - Insulated gate bipolar transistor - Document - PDFSEARCH.IO

First Page	Meta Content
	The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and cond Add to Reading List Document Date: 2010-09-15 01:34:30 Open Document File Size: 144,16 KB Share Result on Facebook Company ABB Semiconductors / / IndustryTerm mediumvoltage applications / steel mills / earlier power devices / transistor-type devices / thyristor devices / medium-voltage applications / reverse conducting device / / Person LESLIE LANGNAU / / Position designer / Editor / / Technology semiconductor / Previous GTO technology / Bipolar Transistor / semiconductors / / URL www.ptdesign.com / / SocialTag Electronics Integrated gate-commutated thyristor Thyristor Gate turn-off thyristor Power semiconductor device Insulated gate bipolar transistor Transistor Field-effect transistor MOSFET Electrical engineering

The next stage in power semiconductors LESLIE LANGNAU, Associate Editor Recent design innovations have resulted in a new power semiconductor that can switch with the speed of an Insulated Gate Bipolar Transistor and condAdd to Reading List