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Power electronics / Semiconductor devices / Insulated gate bipolar transistor / Power semiconductor device / Transistor / Inverter / Bipolar junction transistor / Welding power supply / Electrical engineering / Electromagnetism / Electronics


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Document Date: 2015-02-03 21:02:26

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City

Tokyo / /

Company

Mitsubishi Electric Corporation / B Power Device Works Mitsubishi Electric Corporation / Media Contact Public Relations Division Mitsubishi Electric Corporation / /

Currency

USD / JPY / /

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Event

M&A / /

IndustryTerm

consumer electronics / information processing / transportation / electricity load / higher energy efficiency / technology / satellite communications / electrical and electronic equipment / industrial machinery / wafer detail processing technology / industrial technology / metal bushes / energy / /

Person

Bipolar / /

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Position

leader / Collector / President and CEO / General / /

Product

NX / /

Technology

IGBT chip / wafer detail processing technology / bipolar transistor / newly developed technology / IGBT chips / Simulation / satellite communications / /

URL

http /

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