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Power electronics / Semiconductor devices / Electronic design / Power MOSFET / MOSFET / Insulated gate bipolar transistor / Transistor / Power semiconductor device / Diode / Electronic engineering / Electrical engineering / Electromagnetism


Application Note APT-0403 Rev A May 24, 2004
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Document Date: 2006-08-14 11:36:42

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File Size: 371,49 KB

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Company

Infineon Technologies AG / Advanced Power Technology / /

Event

Natural Disaster / /

IndustryTerm

times higher turn-on energy / appropriate device / avalanche energy capability / avalanche energy / turn-off energy / metal gate / clamped inductive turn-off energy / burnout site / minority carrier lifetime control / inductive switching energy data / reduced minority carrier lifetime / datasheet switching energy test voltage / soft switching applications / datasheet switching energy values / manufacturing process improvements / Thermal impedance test equipment / energy values / clamped inductive turn-on energy / repetitive avalanche energy / manufacturing processes / normal manufacturing variation / avalanche energy specifications / manufacturing defects / energy / turn-on energy / /

Organization

V DSS / /

Person

Tutorial Jonathan Dodge / /

Position

gate driver / representative / forward / Engineer / power supply designer / /

Product

MOSFETs / B300 / /

ProgrammingLanguage

C / /

ProvinceOrState

South Dakota / Oregon / Arkansas / /

Technology

Bipolar Transistor / GSM / /

SocialTag