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Power electronics / Semiconductor devices / Electronic engineering / Insulated gate bipolar transistor / Transistor / Power semiconductor device / MOSFET / Rectifier / Diode / Electromagnetism / Electrical engineering / Electronics


Pete Horowitz 136 Golden Gate Point #501, Sarasota, FL 34236; [removed] RF Power Amplification Using a High Voltage, High Current IGBT New insulated gate bipolar transistors offer some amazing power amplifier
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Document Date: 2014-05-13 15:59:26

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Fourth Dimension Engineering / /

Company

EVI Inc / Cambridge University Press / Tektronix / /

Country

Columbia / /

Currency

USD / /

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Facility

New York University / /

IndustryTerm

high-tech / state devices / bipolar junction devices / driver device / power devices / moderate internal device / communication systems / communications systems / metal oxide semiconductor / smallest device / thick film hybrid manufacturing / energy / /

NaturalFeature

Winfield Hill / /

Organization

Cambridge University / New York University / MIT / Columbia Amateur Radio Association / /

Person

Peter Horowitz / Pete Horowitz / Dave Brougham / Paul Horowitz / /

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Position

author / driver / IR4045 collector / RF head / collector / RIGOL DG4102 RF Power Head / designer / IGBT RF head / RF Driver / member / founder / /

ProgrammingLanguage

DC / /

ProvinceOrState

Maryland / Mississippi / High peak / /

RadioStation

High Voltage / /

Technology

semiconductor / SOA / bipolar transistor / 0.01 91 Chip / 0.01 0.1 0.01 X7R Chip / microwave / pdf / /

URL

www.irf.com/product-info/datasheets/data / /

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