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Semiconductor devices / Power electronics / Power semiconductor device / Diode / Insulated gate bipolar transistor / Failure rate / Thyristor / Transistor / Light-emitting diode / Electromagnetism / Electronics / Electronic engineering


International Foundation HFSJG Activity Report 2001 Name of research institute or organization: ABB Switzerland Ltd, Semiconductors
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Document Date: 2014-03-27 09:52:22

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City

Davos / New York City / /

Company

Solid State Electronics / ABB Switzerland Ltd / /

Facility

Sphinx observatory / /

IndustryTerm

kinetic energy / =device / power semiconductor devices / silicon chip / biased power semiconductor devices / /

Person

Charles Findeisen Egon Herr / /

Position

biased power semiconductor devices Project leader / /

Technology

Bipolar Transistor / semiconductor devices / silicon chip / /

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