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Press release P3298I STMicroelectronics Reveals Climate-Saving Power Devices with High-Temperature Performance Edge ST is among first to commercialize silicon-carbide power MOSFETs, and achieves
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Document Date: 2014-03-12 08:40:23

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File Size: 143,90 KB

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City

Geneva / /

Company

ST / STMicroelectronics / /

Country

United States / /

Currency

USD / /

IndustryTerm

embedded processing solutions / turn-off energy / enterprise computing / electronics applications / data-center energy efficiency / positive and innovative contribution / energy-efficient networking systems / consumer devices / energy management / energy losses / energy efficiency / traction systems / silicon-carbide power / healthcare / automotive products / thermal management / system energy efficiency / high energy costs / energy / /

Organization

Department of Energy / /

Position

global semiconductor leader / /

Product

1200V SiC / SiC devices / SiC / /

ProgrammingLanguage

DC / /

Technology

semiconductor / Bipolar Transistor / semiconductors / SiC technology / /

URL

www.st.com/sicmos / www.st.com / /

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