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Mar[removed]Vol[removed]Mitsubishi Electric Recent Development Results of Power Device • Editorial-Chief Kiyoshi Sakai
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Document Date: 2015-03-22 21:29:09


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File Size: 1,57 MB

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City

Pavilion Lane Youngwood / Youngwood / /

Company

Mitsubishi Electric Corporation / Power Semiconductor Technologies / Product Inquiries America Tony Sibik Powerex Inc. / Diodes / /

Country

Japan / United States / /

Currency

BSD / /

Event

Environmental Issue / /

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IndustryTerm

chip technology / ultra-thin wafer technology / railway application products / machinery / power electronics / white goods applications / energy / inverter systems / carrier frequency / industrial equipment / shale gas revolution / secondary energy / electricity / energy consumption / power electronics products / developed and commercialized power metal-oxide semiconductor field-effect transistors / carrier-stored trench-gate bbipolar transistorr / power electronics equipment / device technologies / consumer applications / metal oxide semiconductor / carrier accumulation layers / high energy saving performance / carrier-stored trench-gate bipolar transistor / integrated power chips / conventioonal products / uunipolar device / /

OperatingSystem

BSD / /

Organization

Shanghai Maxdo Centre / United Nations / /

Person

Masami Fujii Yoshiki Hama Tetsuyuki / Kiyoshi Sakai / Shogo Shibata / Mitssubishi Denkii Giho / Chikao Nishida Masami Fujii Yoshiki / Tatsuya Ichihashi Shinji Yamana Takafumi / Makoto Egashira Koji Miyahara Chikao / Yuji Miy iyazaki / Masahiro Kato Hybrid / Yutaka Kobayashi Tatsuya Ichihashi Shinji / Denki Giho / Koji Miyahara Chikao Nishida Masami / Mitsuharu Tabata / Yoshiki Hama Tetsuyuki Yanase Yutaka Kobayashi Tatsuya / Masahiro Kato / Toshio Masujima Mitsutaka Matsukura Makoto / Yuji Miyazaki / Masato Oshita Toshihiro Kurita / /

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Position

Feature Articles Editor / driver / Prime Minister / J-Series T-PM / WB / VP VWFB IGBT3 Di3 IGBT4 Di4 IGBT5 Di5 IGBT6 Di6 WP VNC / J1-Series PM and driver / TECHNICAL REPORTS Overview Author / conventional WB / representative / IGBT gate driver / Editorial-Chief / PSS15S92E6-AG Item Collector-emitter saturation voltage Forward / Editorial Advisors / /

Product

SiC / IPMs / SiC Modules / /

ProgrammingLanguage

DC / /

ProvinceOrState

Pennsylvania / /

TVShow

Ver / /

Technology

semiconductor / IGBT chip / bipolar transistor / High Ruggedness Power Chips / key technologies / Kazuaki Hiyama Technologies / device technologies / semiconductors / artificial intelligence / Si-IGBT chip technology / using ultra-thin wafer technology / integrated power chips / integrated circuit / /

URL

www.pwrx.com / /

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