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Electronics / Insulated gate bipolar transistor / Power semiconductor device / Thyristor / Gate turn-off thyristor / Transistor / Integrated gate-commutated thyristor / MOSFET / Field-effect transistor / Power electronics / Electromagnetism / Electrical engineering


Current Sharing and Redistribution in High Power IGBT Modules Dissertation submitted to the University of Cambridge for the Degree of Doctor of Philosophy
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Document Date: 2004-01-25 18:29:56

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File Size: 1,88 MB

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Company

Mitel Semiconductor / Dynex Semiconductor / Silvaco / GEC Plessey Semiconductors / Power Electronics / /

Facility

John C. Joyce Clare College / J. C. Joyce Clare College / University of Cambridge / /

IndustryTerm

semiconductor device / software suite / semiconductor devices / manufacturing technologies / device processing / /

Organization

Cambridge University Engineering Department / Resistors Summary Chapter / office of Naval Research / J. C. Joyce Clare College / Engineering Department / Circuit Simulation Oscillators Discussion Chapter / University of Cambridge for the Degree of Doctor / John C. Joyce Clare College / Summary Chapter / /

Person

Bernard Stark / Mick Furber / Haile Rajamani / John Grundy / Ben Gordon / EMI EST GCT GTO IC / Patrick Palmer / /

Position

IL IGBT IGCT IGT MAGT MathCAD MBGT MOSFET NPT PCB PSPICE Collector-Emitter capacitance Gate-Collector / author / supervisor / voltage Electromagnetic Interference Emitter Switched Thyristor Gate-Commutated Thyristor Gate Turn-Off thyristor Collector / Gate Drive Techniques Simplest Gate Drive Active Snubber Closed-Loop Collector / /

ProgrammingLanguage

MathCAD / /

Technology

semiconductor / Bipolar Transistor / 32 chips / semiconductor devices / IGBT chips / simulation / /

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