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Technology / Extreme ultraviolet / Multiple patterning / Cymer /  Inc. / Immersion lithography / Interference lithography / Ultraviolet / Hydrogen silsesquioxane / Resist / Electromagnetic radiation / Materials science / Extreme ultraviolet lithography


[removed]February[removed]Technical Summaries
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Document Date: 2014-11-20 05:26:27


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File Size: 1,54 MB

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City

San Jose / Ru / Los Angeles / /

Company

Micron Technology Inc. / Mitsubishi Electric Corp. / CHs / SAMSUNG Electronics Co. Ltd. / Energie GmbH / Gigaphoton Inc. / Brion Technologies Inc. / Alternative Lithographic Technologies / KLA-Tencor Texas / SEMATECH Inc. (United States) As / ASML Netherlands B.V. / Sun / SEMATECH Inc. / Mentor Graphics Corp. / ASML US Inc. / Cymer Inc. / Hynix Semiconductor Inc. / Zeiss / Intel Corp. / Veeco Instruments Inc. / KLA-Tencor / Mircea Dusa ASML US Inc. / Carl Zeiss AG / Exogenesis Corp. / SK Hynix Inc. / HP / Carl Zeiss SMT GmbH / ASML Taiwan Ltd. / /

Country

Switzerland / Japan / Korea / Germany / Belgium / United States / /

Currency

pence / /

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Event

Product Issues / Business Partnership / /

Facility

San Jose Convention Center / NanoDefect Center / Paul Scherrer Institute / Rochester Institute of Technology / /

IndustryTerm

laser gas flows / gas flow / random search / defect avoidance solution / exposure tools / process chemicals / metal oxide-based nanoparticles / software uses / nuclear energy loss / large metal disk / physical and chemical properties / imaging / metal layers / microexposure tool / gas field ion microscope / energy / i.e. stainless steel / defect-free mask blanks / lithography technology / Post processing examination / high-volume semiconductor manufacturing / semiconductor manufacturing / pre-production tool / scanner solution / sub-20nm devices / manufacturing / high-volume manufacturing / chemicals / field exposure tool / trench printing / energy dispersive x-ray spectroscopy / low k1 imaging / 100kHz proto device / nm technology nodes / debris mitigaiton systems / nm technology node / surface energy / lithographic printing failures / printing failures / scanner optical imaging / grade hardware / printing performance / exposure tool technologies / technology nodes / semiconductor device / printing / possible solution / sub-10nm technology nodes / on-resist solution / actual printing results / chemical durability / neutral argon gas atoms / high-volume manufacturing phase / technology era / chip manufacturing / process solution / chemical stability / technology insertion / /

Organization

Rochester Institute of Technology / PSI EUV / Univ. of Worcester / Univ. of Groningen / Osaka Univ. / Univ. of Tennessee / Paul Scherrer Institut / Univ. of Illinois / INVENT association / Univ. of California / New Energy and Industrial Technology Development Organization / Paul Scherrer Institute / /

Person

Julien Mailfert / Eric Louis / Jack Jenghorng Chen / Andreas Jankowiak / Harry J. Levinson / Michael Wagner / Sang-Hyun Kim / Thomas Laursen / Lauren Morse / Yoichi Tanino / Paul van Adrichem / Toshiro Itani / Bernhard P. Piwczyk / James C. Word / Joo Hyon Noh / Jun-Taek Park / Bruno La Fontaine / Todd R. Younkin / Anthony Yen / Daniel Elg / Paul Gräupner / Chris A. Mack / Shuichi Fujikawa / Dave K. Balachandran / John J. Biafore / Moshe Preil / Daniel A. Smith / Shinji Okazaki / Paul LaBeaume / Chris Maloney / Hyun-Woo Kim / Carlos M. Gonzalez / Yukio Watanabe / Hiroaki Nakarai / Sean Kirkpatrick / Jens Knobloch / Yasin Ekinci / Suzanne M. Coley / Tamotsu Abe / Frank Goodwin / Georg Soumagne / Peter De Bisschop / Takeshi Ohta / Richard Svrluga / Tyler Mowll / Moon Lim / Johannes Bahrdt / Anita Fumar-Pici / Rudy Peeters / Thomas Murray / Alek C. Chen / Byoung-Hoon Lee / Fred Bijkerk / Nigel R. Farrar / Mark C. Phillips / Tsuyoshi Yamada / Koji Funaoka / Takahiro Kozawa / David N. Ruzic / Andreas Gaupp / Alan Hayes / James F. Cameron / Gregory Denbeaux / Christoph Hennerkes / Milton C. Godwin / Nam Kim / Alfred Weaver / Daniel Fan / Atoosa Meseck / Patrick A. Kearney / Steven Hansen / Mason Jang / Hiroshi Tanaka / Michael Patra / Dominic Ashworth / Michael Walsh / Tatsuya Yanagida / Eric Hendrickx / Joseph S. Santillan / Sung-Ki Park / Rafael C. Howell / Arun John Kadaksham / Min Kim / Erwin Zoethout / James M. Blackwell / Takeshi Kodama / Myoung Soo Kim / Takashi Saitou / Diana Spengler / Noreen Harned / Daniel J. Brown / Paul Scherrer / Frank A. Driessen / James W. Thackeray / Nam Ahn / Oliver Schumann / David W. Myers / Tsukasa Hori / Norbert R. Bowering / Alessandro Vaglio Pret / Rik Jonckheere / Steve E. Putna / Jun Iwashita / Ted Liang / Marie E. Krysak / Bruce W. Smith / Michaela Vockenhuber / Alex I. Ershov / Yutaka Shiraishi / Julius Joseph / Steve Trigg / Van de Kerkhove / Stephen D. Hsu / Rajendra Timilsina / Erik M. Sohmen / Hans Meiling / Ali H. Kagalwalla / Igor V. Fomenkov / Tatsuya Yamamoto / Sang-Kee Eah / processing for EUV applications Carlos M. Gonzalez / /

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Position

continuous DUV FlexRay illuminator / NXE /

Product

NXE / CO2-Sn / EnvizION / CO2 / ntd / IL tool / features / IL / /

ProvinceOrState

California / Illinois / Tennessee / /

RadioStation

Watt / /

Technology

radiation / x-ray / CMP / laser system / EUVL technology / spectroscopy / Etch Technology / EUV technology / semiconductor / broadband / exposure tool technologies / Lithography / key technologies / Double Patterning Technology / Process Control / Laser / lasers / Spacer Patterning Technology / lithography technology / simulation / /

URL

www.spie.org/al / /

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