Introduction Semiconductor / Lucent Bell Labs / Ge / Intel Corporation / Toshiba / Quantum Transport Semiconductor / /
Continent
Europe / /
Country
Taiwan / Japan / United States / Korea / /
Currency
USD / / /
Facility
EE Arizona State University / Arizona State University / Mathematics Arizona State University / /
IndustryTerm
ultrasmall electronics / semiconductor technology / self-consistent solution / signal applications / heterostructure devices / manufacturing costs / art devices / semiconductor devices / metal-oxide-semiconductor field-effect transistor / metal deposition / metal gates / final solution / narrow-width devices / metal boundaries / sellable product / manufacturing cost / proposed technology options / carrier transition / bipolar devices / energy relaxation times / device-based electronics industry / energy / metal / optical networking / energy dissipating / gross world product / data processing / carrier transport / process technology / smallest size devices / hypothetical devices / technology scaling / electronics industry / electronic devices / ingenious devices / gate technology / nanoscale devices / manufacturing / ultrasmall devices / adopted strained silicon technology / energy quantization / /
MusicGroup
Double / Monte / SOI / /
NaturalFeature
Strained Si Channel / MOSFET channel / /
OperatingSystem
Fermi / /
Organization
S.S. AHMED† IRA A. Fulton School of Engineering / National Science Foundation / C. HEITZINGER Department / ONR / Semiconductor Industry Association / Arizona State University / Department of Electrical Engineering / /
Person
Herbert Kroemer / Scott Thompson / /
Position
surround-gate structure Concept Fully-depleted SOI Application/Driver / Professor / /
QUANTUM AND COULOMB EFFECTS IN NANODEVICES∗ D. VASILESKA, H.R. KHAN, S.S. AHMED† IRA A. Fulton School of Engineering, Department of EE