D. A. Walko S. A. / L. Wang N. A. / V AIP Publishing LLC / Polymer Source Inc. / C 2014 AIP Publishing LLC / J. S. Speck S. P. / /
Country
United States / /
Currency
USD / / /
Facility
University of Wisconsin Materials Research Science / The Hong Kong University of Science / University of Wisconsin-Madison / /
IndustryTerm
medium range energy / silicon technologies / speed transistor applications / metalorganic chemical vapor deposition method / large-scale array-based devices / metal deposition / electrical devices / carrier density / photonic and electronic applications / plasma-enhanced chemical vapor deposition / planar device processing technology / potential applications / nucleation site / high carrier density / metalorganic chemical vapor deposition / optoelectronic devices / metal catalysts / electronic devices / metal pad distance / device applications / activation energy / thermal activation energy / /
Organization
Department of Electronic / Department of Materials Science and Engineering / Physics Department / Hong Kong University of Science and Technology / HKUST Jockey Club Institute for Advanced Study / Department of Electronic and Computer Engineering / Department of Chemical and Biological Engineering / Hong Kong Special Administrative Region Government / Research Grants Council / University of Wisconsin Materials Research Science and Engineering Center / University of Wisconsin / /
Person
A. Forchel / P. Komninou / Jonathan W. Choi / Nat / Thomas F. Kuech / Xing Lu / Padma Gopalan / G. P. Dimitrakopulos / P. Sheng / E. R. Weber / S. Reitzenstein / T. Karakostas / Ryan Lucas / B. Monemar / V / T. Kehagias / /
Growth and characterization of horizontal GaN wires on silicon Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau Citation: Applied Physics Letters 104, [removed]); doi: