| Document Date: 2010-01-05 10:36:04
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City Tokyo / / Country Japan / / / Facility The University of Tokyo / Photon Factory / / IndustryTerm carrier motilities / nitrogen gas / metal-oxide-semiconductor / metal/high-k gate stack structures / transition metal oxide materials / chemical structures / / Organization University of Tokyo / Tokyo / Department of Applied Chemistry / Synchrotron Radiation Research Organization / / Technology semiconductor / crystallization / spectroscopy / Radiation / ATM / dielectric / /
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Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 In-depth profiles of Hf-based gate insulator films on Si substrates studied by angle-resolved photoemission spectroscopy