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Compact, Physics-based Modeling of Nanoscale Limits of Double-Gate MOSFETs Qiang Chen, Lihui Wang, Raghunath Murali and James D. Meindl March 10, 2004
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Document Date: 2010-03-19 15:37:51
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File Size: 1,74 MB
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City
Boston /
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IndustryTerm
analytical solution /
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NaturalFeature
Si channel /
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Person
Qiang Chen /
Lihui Wang /
Raghunath Murali /
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SocialTag
Electronic engineering
High-k dielectric
Threshold voltage
Short-channel effect
Meindl
Symmetric matrix
Electrical engineering
Electromagnetism
MOSFET