Wacker Siltronic Corporation / Jet Propulsion Laboratory / John Wiley and Sons Inc. / DALSA Semiconductor / Power Semiconductors / Lawrence Berkeley National Laboratory / G. Wang Lawrence Berkeley National Laboratory / N.P. Palaio N.A. / /
processed devices / ultra-thin wafer technology / scientific applications / lower resistivity refractory metal / silicon devices / identical photolithography equipment / trace metal / refractory-metal process / metal contacts / semiconductor devices / refractory metal / ultra thin wafer technology / metal deposition / photolithography tool / metal mask patterns / wet chemical etch / metal photolithography / depleted devices / double-correlated sampling signal processing / partial processing / chemical cleaning steps / energy / metal / field stop technology / thick device / plasma processing / integrated circuit technology migration / mm projection aligner photolithography tool / metal masking / fabrication technology / high temperature processing / rf-diode technology / rf-diode etcher technology / chemical-vapor deposition / metal steps / metal mask photolithography / space applications / exposed metal / chemicals / Fabrication technologies / using the refractory-metal process / /
MarketIndex
case 150 / /
MusicGroup
B.C. / /
NaturalFeature
CCD channel / /
Person
Kirk Gilmore / M.K. Grief / Bill Brown / Shouleh Nikzad / Jordana Bandaru / Richard McDonald / John Emes / Alan Smith / Michael Hoenk / Richard Stover / J.A. Steele / Jr. / Mingzhi Wei / / /
Position
author / /
Technology
third fabrication technology / radiation / Fabrication technologies / alternative fabrication technology / Untrathin-wafer technology / semiconductor devices / lithography / integrated circuit technology / MBE development Another technology / photolithography / integrated circuits / ultra-thin wafer technology / ultra thin wafer technology / second technology / Three fabrication technologies / Refractory-metal technology / Trench field stop technology / dielectric / rf-diode technology / radio frequency / 1996 IEEE/CPMT Int’l Electronics Manufacturing Technology / rf-diode etcher technology / three technologies / /
Development of Fully Depleted, Back-Illuminated Charge Coupled Devices C.J. Bebek, D.E. Groom, S.E. Holland, A. Karcher, W.F. Kolbe, N.P. Palaio, N.A. Roe, B.T. Turko, and G. Wang Lawrence Berkeley National Laboratory, 1