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Integrated circuits / Semiconductor devices / Threshold voltage / Charge-coupled device / Depletion region / Diode / CMOS / Transistor / Self-aligned gate / Electronic engineering / Electrical engineering / Electronics


High-voltage-compatible, fully depleted CCDs S.E. Holland, C.J. Bebek, K.S. Dawson, J.H. Emes, M.H. Fabricius, J.A. Fairfield, D.E. Groom, A. Karcher, W.F. Kolbe, N.P. Palaio, N.A. Roe, and G. Wang Lawrence Berkeley Nati
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Document Date: 2006-08-07 12:54:04


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File Size: 1,57 MB

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City

Berkeley / /

Company

Lawrence Berkeley National Laboratory / Cbc / Cox / VF / G. Wang Lawrence Berkeley National Laboratory / DALSA Semiconductor / N.P. Palaio N.A. / 2D / /

Country

Netherlands / /

/

Event

Business Partnership / /

Facility

Lawrence Berkeley National Laboratory / /

IndustryTerm

metal / astronomical applications / potential applications / scientific applications / 1D solution / high-energy-physics detectors / high-energy-physics experiments / metal contact / imaging / proposed space-based dark energy mission / /

NaturalFeature

CCD channel / /

Person

A. Karcher / /

/

Position

author / guard / /

Product

CCDs / /

ProvinceOrState

North Dakota / California / /

Technology

semiconductor / x-ray / dielectric / spectroscopy / lithography / Simulation / integrated circuits / /

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