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Energy conversion / Semiconductor devices / Multijunction photovoltaic cell / Gallium arsenide / Indium gallium arsenide / Solar panel / P–n junction / Photovoltaics / Indium gallium phosphide / Chemistry / Solar cells / Energy


p-n Junction Heterostructure Device Physics Model of a Four Junction Solar Cell Melissa J. Griggs*, Brendan M. Kayes, and Harry A. Atwater California Institute of Technology, Thomas J. Watson, Sr. Laboratories of Applied
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Document Date: 2006-11-13 12:58:04


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City

Syracuse / West Sussex / Pasadena / London / Ekins-Daukes / /

Company

Quantum Electronics / Academic Press Inc. / Marion / John Wiley & Sons Ltd. / Kuwait Journal / Ge / National Renewable Energy Laboratory / /

Country

United Kingdom / Kuwait / /

Currency

pence / USD / /

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Facility

National Renewable Energy Laboratory / Harry A. Atwater California Institute of Technology / /

IndustryTerm

intervalley free-carrier absorption / concentrator applications / carrier concentration / photovoltaic energy conversion / free-carrier absorption13 / connected device / connection device / overall heterostructure device / energy gap / p-n junction device / intrinsic carrier concentration / terrestrial applications / carrier mobility / free carrier absorption / /

MusicGroup

J.K. / /

Organization

California Institute of Technology / National Science Foundation / /

Person

Thomas J. Watson / Sr. / Sn / Martha Symko-Davies Proc / Melissa J. Griggs / Brendan M. Kayes / Sunny Day / /

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Position

King / mn mp / /

ProvinceOrState

New Jersey / Sussex / California / /

PublishedMedium

Ieee Journal of Quantum Electronics / Solar Energy Materials and Solar Cells / Journal of Applied Physics / /

Technology

semiconductor / semiconductors / lasers / dielectric / simulation / recombination / CVD / /

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