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Electronic engineering / Transistors / High-k dielectric / Gate dielectric / Thermal oxidation / Semiconductor device fabrication / Silicon dioxide / Polycrystalline silicon / Negative bias temperature instability / Chemistry / Electromagnetism / Electronics


Photon Factory Activity Report 2005 #23Part BSurface and Interface 4C,6A,15C/2004G059 Residual Order in the Interfacial SiO2 Layer
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Document Date: 2010-01-05 10:32:23

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City

Tokyo / Osaka / /

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Facility

Osaka University / Photon Factory / /

IndustryTerm

k gate dielectric technology / silicon metal-oxide-semiconductor / /

Organization

Pennington / Graduate School / Electrochemical Society / Osaka University / /

Technology

semiconductor / radiation / high-k gate dielectric technology / dielectric / X-ray / /

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