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Magneto-optic Kerr effect / Gallium manganese arsenide / Ferromagnetism / Magnetic semiconductor / Hysteresis / Coercivity / Remanence / Electron / Magnet / Physics / Electromagnetism / Magnetic ordering


PHYSICAL REVIEW B 83, [removed]Above-bandgap magneto-optical Kerr effect in ferromagnetic Ga1−x Mn x As C. Sun,1,2,3 J. Kono,1,2,3,* Y.-H. Cho,4 A. K. W´ojcik,4 A. Belyanin,4 and H. Munekata5 1
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Document Date: 2011-03-25 17:33:32


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College Station / London / Boston / /

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Engineering Laboratory / Diluted Magnetic Semiconductors / N. Samarth D. D. / J. Stephens D. D. / I. Malajovich D. D. / R. K. Kawakami D. D. / /

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Japan / United States / /

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Texas A&M University / Tokyo Institute of Technology / Rice University / The Richard E. Smalley Institute / /

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carrier-induced ferromagnetism / photon energy / energy-level structures / itinerant charge carrier spins / transition-metal ions / photon-energy-dependent hysteresis loops / lowest-energy / k-dependent self-energy / higher energy / disordered systems / quantum interference device / exchange interaction energy / hole carrier concentration / hole free energy / magnetic systems / energy / /

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Fermi / /

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Department of Electrical and Computer Engineering / Rice University / Houston / American Physical Society / National Science Foundation / US Federal Reserve / Department of Physics and Astronomy / Richard E. Smalley Institute for Nanoscale Science and Technology / Texas A&M University / Department of Physics / U.S. Securities and Exchange Commission / Tokyo Institute of Technology / /

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M. Cukr / V / Mni / Nat / Kerr / /

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S-2 / S-1 / Kyocera X-tc Cellular Phone / S-3 / /

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Texas / %8V / %6C / %7V / /

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semiconductor / semiconductors / x-ray / dielectric / spectroscopy / /

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