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Separation processes / Semiconductor growth / Crystals / Zone melting / Hafnium / Impurity / Semiconductor / Recrystallization / Partition coefficient / Chemistry / Laboratory techniques / Phase transitions


UDCREFINING OF HAFNIUM BY FLOATING-ZONE METHOD IN AN ELECTRIC FIELD O.E. Kozhevnikov, P.N. V’yugov, M.M. Pylypenko National Science Center “Kharkov Institute of Physics and Technology”, Kharkov, Ukraine
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Document Date: 2015-04-22 09:46:57


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City

Electrotransport / /

Company

Khadzhai A.S. / Hafnium Metal / /

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Facility

Kharkov Institute of Physics / /

IndustryTerm

refined metal / metal / chemical and physico-chemical methods / base metal substrate / base metal absorption / universal gas constant / difficult-to-strippant metal impurities / chemical / metal diffusion layer / Chemical analys results / chemical properties / round cross section metal rods / refractory metal / chemical methods / chemical analysis / gas-forming impurities / chemical element / metal-impurity / protection systems / /

Organization

M.M. Pylypenko National Science Center / Kharkov Institute of Physics and Technology / /

Position

author / /

ProvinceOrState

Missouri / P.N. / /

RadioStation

ZM / /

Technology

semiconductor / crystallization / ion exchange / /

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