Orlando / Lewis / Pasadena / New York / EEWS / Vienna / Midland / /
Company
Kowalczyk S. P. Semiconductor / W. G. III-V Compound Semiconductor / Analytical Sciences Laboratory / Oxford University Press / Dow Chemical Company / Thomas J. Watson Laboratories / GaP / Watkins S. P. / Physical Electronics / AXT Inc. / Suzuki / ASSOCIATED CONTENT / /
Country
United States / South Korea / /
Currency
pence / / /
Facility
Beckman Institute of Caltech / Korea Advanced Institute of Science / California Institute of Technology / Molecular Materials Research Center / stable GaP / /
IndustryTerm
functional heterojunction devices / energy barrier / transportation / earth-abundant solar applications / energy shift / chemical potential / post processing / chemical inhomogeneities / metal atoms / chemical functionalization / chemical species / long minority-carrier diffusion length / photovoltaic applications / chemical potentials / lowest energy / calculated energy band diagrams / energy / inert-gas ion bombardment / relative surface formation energy diagram / surface formation energy / higher binding energy shift / chemical / earth-abundant photovoltaic devices / energy-band alignment / steel / /
MusicGroup
Valence / /
OperatingSystem
Fermi / /
Organization
California Institute of Technology / Korea Advanced Institute of Science and Technology / Center for Hybrid Interface Materials / Department of Energy / Molecular Materials Research Center / American Chemical Society / Graduate School / African Union / Beckman Institute of Caltech / Kwanjeong Educational Foundation / Ministry of Science / Oxford University / /
Person
Prince / Harry A. Atwater / Hyungjun Kim / Steve J. Rozeveld / ‡ Hyungjun / Gallagher / Samantha S. Wilson / / /
Position
AUTHOR INFORMATION Corresponding Author *E-mail / Prince / /
Article pubs.acs.org/JPCC Growth Mechanism and Electronic Structure of Zn3P2 on the Ga-Rich GaAs(001) Surface Seokmin Jeon,† Jeffrey P. Bosco,† Samantha S. Wilson,† Steve J. Rozeveld,‡ Hyungjun Kim,§