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Electronic states in extremely thin a-Si:H layers as part of a-Si/c-Si heterostructures M. Schmidt, L. Korte, A. Laades, A. Schoepke Hahn-Meitner-Institut GmbH, Berlin Abteilung Silizium Photovoltaik DBerlin, Keku
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Document Date: 2010-05-11 12:43:46
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File Size: 162,69 KB
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City
Berlin /
/
Company
A. Schoepke Hahn-Meitner-Institut GmbH /
World Scientific /
/
Country
Singapore /
/
IndustryTerm
analytical tool /
amorphous network /
energy /
energy increases /
/
OperatingSystem
DOS /
Fermi /
/
Technology
spectroscopy /
recombination /
/
SocialTag
Silicon
Spectroscopy
Heterojunction
Amorphous silicon
Solar cell
Band gap
Fermi level
X-ray photoelectron spectroscopy
Photoemission spectroscopy
Physics
Electronic states in extremely thin a-Si:H layers as part of a-Si/c-Si heterostructures M. Schmidt, L. Korte, A. Laades, A. Schoepke Hahn-Meitner-Institut GmbH, Berlin Abteilung Silizium Photovoltaik DBerlin, Keku