Analytic Formulae for the Impact Ionization Rate for Use in Compact Models of UltraShort Semiconductor Devices H. C. Morris, M. M De Pass and H. Abebe This work was supported in part by USC ISI MOSIS - Laguerre polynomials - Document - PDFSEARCH.IO

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	Analytic Formulae for the Impact Ionization Rate for Use in Compact Models of UltraShort Semiconductor Devices H. C. Morris, M. M De Pass and H. Abebe This work was supported in part by USC/ISI MOSIS Add to Reading List Document Date: 2010-03-19 15:36:18 Open Document File Size: 380,05 KB Share Result on Facebook Technology Semiconductor Devices / / URL http / SocialTag Orthogonal polynomials Polynomials Laguerre polynomials

Analytic Formulae for the Impact Ionization Rate for Use in Compact Models of UltraShort Semiconductor Devices H. C. Morris, M. M De Pass and H. Abebe This work was supported in part by USC/ISI MOSISAdd to Reading List