Toshiba / Blum A. S. / Cao L. C. / Patterson / Campos L. C. / Simmons / Ge / Lafarge / ASSOCIATED CONTENT / / /
Facility
stable Pt / Delft University of Technology / Kavli Institute of Nanoscience / /
IndustryTerm
metal / olecular electronics / few-layer graphene device / electronics / chemical reaction / subsequent metal evaporation / /
Organization
American Chemical Society / African Union / European Union / Universitat de Barcelona / Delft University of Technology / Dutch Foundation / Kavli Institute of Nanoscience / /
Person
Justus W. Ruitenberg / † Johannes / Johannes S. Seldenthuis / Della Rocca / Amelia Barreiro / /
Position
AUTHOR / Mayor / model for tunneling / Artist / representative / /
LETTER pubs.acs.org/NanoLett Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Electrodes Ferry Prins,*,†,§ Amelia Barreiro,*,†,§ Justus W. Ruitenberg,† Johannes S. Seldenthuis,† N