| Document Date: 2010-12-27 22:22:07
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City Osaka / / Company Ge / / / Facility Osaka University / / IndustryTerm channel metal oxide semiconductor field effect transistors / chemical vapor deposition / higher carrier mobility / / Organization Heiji WATANABE Department of Material and Life Science / Graduate School / Osaka University / / Person Si / / Technology semiconductor / chemical vapor deposition / /
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Photon Factory Activity Report 2009 #27 Part BSurface and Interface 4C/2008G017 Residual order in thermal oxide of fully strained SiGe alloy on Si