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Chemistry / Materials science / Nanoelectronics / Nanomaterials / Carbon nanotube / Solar cells / Nanowire / Threshold voltage / Atomic layer deposition / Carbon nanotubes / Physics / Emerging technologies


Mario Olmedo,† Chuan Wang,‡ Koungmin Ryu,‡ Huimei Zhou,† Jingjian Ren,† Ning Zhan,† Chongwu Zhou,‡ and Jianlin Liu†,* ARTICLE Carbon Nanotube Memory by the
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Document Date: 2013-08-20 09:36:57


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City

carbon nanotube / Nanotube / Lim / MOSFET / New York / OLMEDO ET / /

Company

Nitto Denko / 3D Electronics / John Wiley and Sons / Si Heteronanocrystal Metal / Ge / /

Country

United States / /

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Facility

University of Southern California / University of California / /

IndustryTerm

present device / fresh device / gas source molecular beam epitaxy / surface energy / source gas / e-beam / higher energy levels / memory applications / memory device / nm. energy / memory devices / deeper energy levels / less surface energy / /

MarketIndex

nm / /

MusicGroup

Energy / /

NaturalFeature

Self-Assembled Ge Islands / Nanoscale Channel / /

Organization

American Chemical Society / DMEA Center on Nanomaterials / Assembly of Silicon Nanocrystals / African Union / National Science Foundation / University of Southern California / San Bernardino Community College District Applied Technology Training Center / Department of Electrical Engineering / University of California / Riverside / /

Person

Yang / Schroder / Chuan Wang / Mario Olmedo / † Chuan / /

Position

D. J. / VP / /

ProvinceOrState

Alabama / S. K. / Southern California / North Carolina / California / Y. T. / Ontario / /

Region

Southern California / /

Technology

Quantum Dots / Dielectric / Nonvolatile Memory / photolithography / Integrated Circuits / /

URL

www.acsnano.org / http /

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