SURFACE PROPERTIES OF SEMICONDUCTORS / Lincoln Laboratory / Bell Telephone Laboratories / Raytheon / Garrett / /
Country
Israel / /
Currency
pence / /
Facility
University of Reading / Whitman College / University of Illinois / Hebrew University / /
IndustryTerm
law governing / metal / chemical reactions / germanium-gas / energy change / chemical changes / mass action law np / electronics / metal surfaces / physical and chemical changes / minority carrier / ambient gas / germanium gas interface / minority carrier concentration / gas ambient / added carrier concentration / energy / /
Organization
Whitman College / University of Reading / Kingston / University of Illinois / Hebrew University / /
Person
Irving Langmuir / Benjamin H. Brown / R. S. Ohl / H. C. Theuerer / J. H. Scaff / Walter Brown / /
W A L T E R H. B R A T T A I N Surface properties of semiconductors Nobel Lecture, December 11, 1956 First let me say that while I am very proud to be one of the recipients of the