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Nitrides / Nanotechnology / Energy conversion / Solar cells / Indium gallium nitride / Light-emitting diode / Nanoparticle / Thin film solar cell / Quantum efficiency / Chemistry / Physics / Semiconductor devices


APPLIED PHYSICS LETTERS 96, 153501 共2010兲 Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M. Pryce,1,a兲 Daniel D. Koleske,2 Arthur J. Fischer,2 and Harry A. Atwater1,3
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Document Date: 2010-05-12 18:36:12

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City

Albuquerque / Pasadena / Wiley / /

Company

Sandia National Laboratories / Thomas J Watson Laboratories / /

Country

United States / /

Currency

USD / /

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Facility

American Institute of Physics Downloaded / California Institute of Technology / D. G. Hall / Kavli Nanoscience Institute / American Institute of Physics / /

IndustryTerm

actual device / iodine-methanol solution / photovoltaic devices / metalorganic chemical vapor deposition / incomplete carrier collection / simulation software results / thin photovoltaic devices / metal contacts / dry etch processing / metal nanostructures / carrier collection efficiency / carrier collection / photovoltaic device / photovoltaic applications / carrier recombination / removed using an iodine-methanol solution / /

Organization

California Institute of Technology / American Institute of Physics / Caltech Center for Sustainable Energy Research / National Science Foundation / Kavli Nanoscience Institute / Department of Energy Solar Energy Technology Program / the Global Climate and Energy Program / /

Person

Imogen M. Pryce / Daniel D. Koleske / /

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Position

representative / /

ProvinceOrState

New Mexico / New York / California / /

PublishedMedium

APPLIED PHYSICS LETTERS / /

RadioStation

AM 1.5 / /

Technology

semiconductor / radiation / laser / dielectric / simulation / recombination / chemical vapor deposition / /

URL

http /

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