FURTHER EVALUATION of GaAs FETs for CRYOGENIC READOUT Randall K. Kjrhman* arKi John A. Lipa w. w. Hansen Experimental Physics Laboratories Stanfoni University

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Date: 2007-10-12 14:27:26 Optoelectronics Semiconductor devices Compound semiconductors Inorganic compounds Field-effect transistor Noise Gallium arsenide Transistor MESFET Electronics Chemistry Electromagnetism		FURTHER EVALUATION of GaAs FETs for CRYOGENIC READOUT Randall K. Kjrhman* arKi John A. Lipa w. w. Hansen Experimental Physics Laboratories Stanfoni University Add to Reading List Source URL: einstein.stanford.edu Download Document from Source Website File Size: 910,21 KB Share Document on Facebook

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