Microsystems Technology Laboratories / Ge / Intel Corporation / /
Country
Japan / / /
Event
Person Communication and Meetings / /
Facility
Massachusetts Institute of Technology / Electron Beam Lithography Facility / /
IndustryTerm
circuit network / metal sheet resistance / metal / lateral devices / logic devices / parallel thin metal contacts / metal-first approach / thin metal line / metal contacts / nano-scale metal / self-aligned metal contacts / metal resistance / nano-scale metal lines / elemental metal / extrinsic metal lines / metal/semiconductor system / intrinsic device / electronics / thick metal layer / metal-semiconductor contact resistance / metal contact / resistive circuit network / equivalent circuit network / /
Organization
Focus Center for Materials / Structures and Devices / Massachusetts Institute of Technology / /
Person
Alon Vardi / T. W. Kim / J. Lin / Wenjie Lu / M. Passlack / J. A. del Alamo / D. A. Antoniadis / Nano / D. H. Kim / A. Guo / Jesús A. del Alamo / Alex Guo / /
178 IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 2, FEBRUARY 2014 A Test Structure to Characterize Nano-Scale Ohmic Contacts in III–V MOSFETs