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December 10, 2013 Tohoku University Kyoto University Demonstration of 20-nm magnetic domain wall motion memory
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Document Date: 2013-12-09 21:31:38

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City

Washington / D.C. / /

Country

United States / /

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Facility

University Demonstration / Kyoto University / WPI Advanced Institute / Research Institute of Electrical Communication / University TEL / Tohoku University / /

IndustryTerm

smallest domain wall motion device / semiconductor technology / magnetic domain wall motion device / semiconductor technologies / metal-oxide-semiconductor field-effect transistor / research / domain wall motion device / magnetic domain wall motion memory devices / spintronics device / nonvolatile spintronics devices / spintronics devices / domain wall motion devices / magnetic domain wall motion memory device / /

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Culture / Technology / Sports / Science / /

Organization

Electrical Communication / and WPI Advanced Institute for Materials Research / Japan Society for the Promotion of Science / Center for Spintronics Integrated Systems / Research Institute of Electrical Communication / Kyoto University / Tohoku University / Institute for Chemical Research / Ministry of Education / /

Person

Hideo Ohno / Teruo Ono / Yutaka Kadowaki / /

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Position

Support-office manager / Professor / /

Technology

semiconductor / semiconductor technologies / Information Technology / semiconductor technology / Random Access / field-effect transistor / SRAM / integrated circuits / /

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