Back to Results
First PageMeta Content
Magnetic ordering / Computer memory / Non-volatile memory / Emerging technologies / Magnetoresistive random access memory / Tunnel magnetoresistance / Thermal Assisted Switching / Exchange bias / Magnetic storage / Physics / Electromagnetism / Spintronics


Document Date: 2013-06-18 09:13:00

Open Document

File Size: 379,36 KB

Share Result on Facebook

City

Kano / London / Grenoble / /

Company

S. S. P. / /

Country

United States / /

/

Facility

Transistors Tunnel / Tunnel MagnetoResistance / /

IndustryTerm

memory technologies / energy barrier / time domain imaging / non-volatile memory technology / Energy minimization / semiconductor device / semiconductor-free metal/insulator structure / mainstream semiconductor technology / volatile and non-volatile memory technologies / energy cost / magnetic tape storage systems / technology proposing / digital consumer products / normal metal / magnetostatic energy / higher switching energy / mainstream technology / feedback network / transition metal / thermal energy / metal/insulator/metal diode / memory array using magnetic tunnel junction devices / mechanical systems / mode magnetoresistance random access memory devices / /

Movie

Spin / /

Organization

DRAM SRAM / /

Person

P. P. Freitas / V / D. Pescia / V / A. Iovan / V / J. Grollier / V / G. Borghs / O. Redon / M. Hashimoto / M. Kerekes / P. P. Freitas / C. S. Lee / J.P. Nozi`eres / B. Dieny / Nat / M. Durlam / /

Technology

semiconductor / one technology / memory technologies / RAM / MRAM technology / Flash technology / non-volatile memory technology / Flash memory / disk drive / dielectric / mainstream technology / random access / SRAM / mainstream semiconductor technology / volatile and non-volatile memory technologies / FLASH / /

SocialTag