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Computer hardware / Technology / Physics / Spintronics / Supramolecular chemistry / Magnetoresistive random access memory / Nanoimprint lithography / Phase-change memory / Flash memory / Emerging technologies / Computer memory / Non-volatile memory


V Contents Preface XV List of Contributors
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Document Date: 2008-09-12 02:50:14

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City

Weinheim / Reading / /

Company

Nanostructures 256 Manipulation Systems 260 Interactive Systems / Multiple-Spin Systems / Molecular-Scale Electronics / Uri Sivan Introduction 275 DNA-Templated Electronics / Nanoscale Systems / Ó 2008 WILEY-VCH Verlag GmbH & Co. KGaA / DRAM Technology Requirements 384 Capacitor Technologies / Requirements 384 Capacitor Technologies 385 Array Transistor Technologies / /

Facility

Hall Effect / Tunnel Magnetoresistance / Tunnel Barrier / Terminal Devices / /

MarketIndex

SET / /

MusicGroup

Structure / Current / SET / Power / Cell / RESET / /

Organization

Assembly of Nanostructures / Assembly of Metal Nanoparticles / Assembly of a DNA-Templated Carbon Nanotube Field-Effect Transistor / Assembly of Molecular-Scale Electronics / Atomic Force / /

Person

Rainer Waser / Dong Chul Yoo / Joseph M. Thijssen / Dirk J. Wouters / Ralph K. Cavin / Silvia Karthäuser / Alexander M. Bratkovsky / Chung An / Larissa Juschkin / Michael N. Kozicki / Dirk Beyer / Inorganic Solid Electrolytes / Maria Mitkova / Johannes Kretz / Ulrich Simon / Jae Bae / Bert Voigtländer / /

/

Position

COB / General / /

Product

Efficient Spin Injection / Spin Injection / /

ProgrammingLanguage

NIL / Joule / /

Technology

Radiation / 3-D / Information Technology / Antibodies / Semiconductor Devices / Lithography / Field-Effect Transistor / Random Access / Photolithography / Laser / Flash Memory / Crystallization / Flash / Electrochemistry / /

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