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Etching mechanism of the single-step through-silicon-via dry etch using SF6/C4F8 chemistry Zihao Ouyang, D. N. Ruzic, Mark Kiehlbauch, Alex Schrinsky, and Kevin Torek Citation: Journal of Vacuum Science & Technology A 32
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Document Date: 2015-04-22 08:46:33
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Etching mechanism of the single-step through-silicon-via dry etch using SF6/C4F8 chemistry Zihao Ouyang, D. N. Ruzic, Mark Kiehlbauch, Alex Schrinsky, and Kevin Torek Citation: Journal of Vacuum Science & Technology A 32