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Electrical engineering / Digital signal processing / Image sensors / Image processing / Integrated circuits / Active pixel sensor / Image noise / Noise reduction / MOSFET / Electronics / Noise / Electromagnetism


CMOS image sensor reaching 0.34 e-RMS read noise by inversion-accumulation cycling Qiang Yao, Bart Dierickx, Benoit Dupont, Gerlinde Ruttens Caeleste CVBA, Hendrik Consciencestraat 1 b, 2800 Mechelen, Belgium E-mail: qia
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Document Date: 2015-06-16 06:38:21

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Company

DCSN / /

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IndustryTerm

µm technology / technology standpoint migrating / metal-oxide-semiconductor transistors / performance applications / column pixel on-chip off-chip / metal-oxide-semiconductor field-effect transistors / /

OperatingSystem

Fermi / /

Person

Pixel / Hendrik Consciencestraat / Bart Dierickx / Qiang Yao / Benoit Dupont / /

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Position

CoB / /

Technology

semiconductor / select 1 ADC column pixel on-chip off-chip / 0.18 µm technology / /

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