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| First Page | Document Content | |
|---|---|---|
 Date: 2009-03-25 10:37:04Technology Manufacturing Coatings Atomic layer deposition Chemical vapor deposition High-k dielectric Polycrystalline silicon Atomic layer epitaxy Titanium nitride Thin film deposition Chemistry Semiconductor device fabrication |
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A302-medea+ (lo1[removed]:54 | Brochure-ENHANCE-Winter School_ FinalDocID: 1qRyN - View Document |
| SUPPLEMENTARY INFORMATION doi:nature14417 SUPPLEMENTARY METHODS MOCVD growth of ML MoS2 and WS2 films. As illustrated in Fig. 2a, the synthesis of MLDocID: 1qxxx - View Document |
| Journal of Undergraduate Research 3, Chemical Vapor Deposition of Nickel Ferrite Using Ni(C5 H5 )2 and Fe(C5 H4 C4 H9 )(C5 H5 ) M. A. Kimbell Department of Electrical Engineering, Rose-Hulman Institute of TechnDocID: 1plnh - View Document |
| Microsoft Word - ENHANCE-FlyerDocID: 1o6cJ - View Document |
| THOMAS F. KUECH UW-Foundation Chair Beckwith-Bascom Professor Milton J. and A. Maude Shoemaker Professor of Chemical Engineering Member of the National Academy of Engineering University of Wisconsin-Madison Department ofDocID: 111F9 - View Document |