New York / Berlin / St. Petersburg / London / San Diego / /
Company
I. Semiconductors / Wide-Bandgap Semiconductors / IOP Publishing / Nitride Wide Bandgap Semiconductors / Group III-V Semiconductor Electronics / Wide Band Gap Semiconductors / WideBandgap Semiconductors / Clarendon Press / III-V Nitrides Semiconductors / Oxford University Press / World Scientific / III-V Nitride Semiconductors / III-Nitride Semiconductors / Diodes / John Wiley and Sons / Nitride Semiconductors / Low Dimensional Nitride Semiconductors / John Wiley & Sons / /
Country
Russia / Singapore / /
Currency
pence / USD / /
Facility
Institute Phys / Rensselaer Polytechnic Institute / The Ioffe Physical-Technical Institute of Russian Academy / Hemisphere Pub / /
IndustryTerm
energy gap / dimensional electron gas / optoelectronic applications / bandgap semiconductor devices / energy / phonon energy / device applications / search query / /
MusicGroup
High Power / M. E. / Energy / Effective / Valence / A. F. / High Frequency / /
Organization
inc. New Jersey / office of Naval Research / Ioffe Physical-Technical Institute / USA MICHAEL E. LEVINSHTEIN Solid State Electronics Division / Russian Academy of Sciences / Rensselaer Polytechnic Institute / Electrochemical Society / Oxford University / Electrical / Computer / and Systems Engineering Center for Broadband Data Transport Science / S. SHUR Department of Electrical / /
Person
J. Narayan / B. K. Meyer / III / R. K. Willardson / Karl Boer / R. Van Overstraeten / T. D. Moustakas / III / M. Willander / F.A. Ponce / J. I. Pankove / C. H. Carter Jr. / MICHAEL E. LEVINSHTEIN / T. D. Moustakas / Condensed Matter / SERGEY L. RUMYANTSEV / S. C. Jain / /
MATERIALS PROPERTIES OF NITRIDES. SUMMARY SERGEY L. RUMYANTSEV AND MICHAEL. S. SHUR Department of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science