Objective Our goal is to address the metrology of magnetic effects at the nanoscale level. Nanomagnet arrays form the basis for important data storage technologies, notably magnetoresistive random access memory and bit-p

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Date: 2012-10-02 10:07:00 Non-volatile memory Computer memory Magnetic ordering Magnetostatics Magnetoresistive random access memory Micromagnetics Nanomagnet Magnet Nanomaterials Electromagnetism Emerging technologies Physics		Objective Our goal is to address the metrology of magnetic effects at the nanoscale level. Nanomagnet arrays form the basis for important data storage technologies, notably magnetoresistive random access memory and bit-p Add to Reading List Source URL: nist.gov Download Document from Source Website File Size: 244,61 KB Share Document on Facebook

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