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Cree / ANT / Microwave / Technology / Telecommunications engineering / DBm


CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solu
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Document Date: 2014-07-08 11:55:04

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File Size: 1,52 MB

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City

Durham / /

Company

Frequency (GHz) Cree Inc. / GaN HEMTs / Cree Inc. / mA Cree Inc. / Way Private Radio / /

Country

United States / /

Currency

pence / /

/

IndustryTerm

broadband solution / microwave applications / /

Person

Noise Resistance (Ohms) / /

/

Position

RT / ˚C Maximum Forward / /

Product

CGH40006P / /

ProgrammingLanguage

C / DC / /

ProvinceOrState

North Carolina / /

Technology

broadband / CDMA / microwave / /

URL

www.cree.com/products/wireless_appnotes.asp / www.cree.com/rf / /

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