APPLIED PHYSICS LETTERS 91, 202105 共2007兲 Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing Grace Huiqi Wang and Eng-Huat Toh Silicon Nano Device Laboratory, Department of Electrical and Comp

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Date: 2013-02-01 05:11:38		APPLIED PHYSICS LETTERS 91, 202105 共2007兲 Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing Grace Huiqi Wang and Eng-Huat Toh Silicon Nano Device Laboratory, Department of Electrical and Comp Add to Reading List Source URL: www.ciba.nus.edu.sg Download Document from Source Website File Size: 363,95 KB Share Document on Facebook