SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa, - Miyoshi - Document - PDFSEARCH.IO

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	SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa, Add to Reading List Document Date: 2013-02-12 08:39:12 Open Document File Size: 977,18 KB Share Result on Facebook

SISPAD 2012, September 5-7, 2012, Denver, CO, USA Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors Yasuaki Miyoshi, Matsuto Ogawa,Add to Reading List