![High electron mobility transistor / Semiconductor devices / Gallium arsenide / Indium gallium arsenide / Indium phosphide / Field-effect transistor / Radio spectrum / Vehicle Identification Number / Light-emitting diode / Chemistry / Optoelectronics / Monolithic microwave integrated circuit High electron mobility transistor / Semiconductor devices / Gallium arsenide / Indium gallium arsenide / Indium phosphide / Field-effect transistor / Radio spectrum / Vehicle Identification Number / Light-emitting diode / Chemistry / Optoelectronics / Monolithic microwave integrated circuit](https://www.pdfsearch.io/img/6043f3f50e6e06e4d30609e4f279216b.jpg)
| Document Date: 2008-07-23 19:16:32 Open Document File Size: 1,07 MBShare Result on Facebook
City Miami / / Company Northrop Grumman / Xiao-Bing (Gerry) Mei Northrop Grumman Corporation / / Currency USD / / IndustryTerm um thick chips / metal / power applications / interconnect metal process / / MusicGroup MMW Camera MAFET MMW InP HEMT MMIC / LNAs / W / GaAs HEMT LNA TRP W / MMIICs W / LNAs ODIN / IMAS / MLS / ALMA / MMIC Performance / MMW Camera / / OperatingSystem Poseidon / / Organization National Oceanic and Atmospheric Administration / European Space Agency / / Person Ig / Paul Allen Telescope / Richard Lai / / / Position GHz Driver / forward / / ProgrammingLanguage MIMIC / DC / / Technology 2008 HEMT Technology / Deep Space Network / InP HEMT technologies / 50 um thick chips / /
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