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1764 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
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Document Date: 2014-05-08 10:01:10

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File Size: 2,71 MB

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Durham / /

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MICROWAVE SEMICONDUCTORS / Triquint / Raytheon / EMC / Agilent / Wide Bandgap Semiconductor / Cree Inc. / Hughes Research Laboratories / GaN / /

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CONCEPTS / /

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PA (DPA) / ON PA / /

Person

Al Ga / James W. Milligan / William L. Pribble / Simon M. Wood / Raymond S. Pengelly / Scott T. Sheppard / /

Position

driver / /

Product

GaN HEMTs / SiC / /

ProvinceOrState

Pennsylvania / North Carolina / /

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WBGS / /

Technology

semiconductor / substrate technologies / broadband / 3-D / power transistor technologies / MICROWAVE / RF power semiconductor technologies / Field-effect transistor / HEMT technologies / IDE-BANDGAP semiconductor technology / Cable TV / chemical vapor deposition / HEMT technology / Verilog / dielectric / AlGaN HEMT technology / simulation / integrated circuit technologies / integrated circuit / /

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