IBM / Hynix / EUV LLC / NTT LSI Laboratories / Nikon / Globalfoundry / TSMC / Motorola / Mask Products Business Group / Samsung Electronics Corporation / AT&T Bell Laboratories / McGraw-Hill / Hitachi / Oxford Instruments / Lawrence Livermore National Laboratory / Lawrence Berkeley National Laboratory / Toshiba / Applied Materials Inc. / Applied MAterial Inc. / Cleans / Virtual National Laboratories / Mask Etch / Sandia National Laboratory / Intel / Photronics Inc. / Advanced Micro Devices / /
Continent
Asia / North America / Europe / /
Country
Germany / Japan / United States / /
Currency
GBP / USD / /
Facility
Lawrence Livermore National Laboratory / National Institute of Standards and Technology / University of Central Florida / Santa Clara University / Indian Institute of Technology / Fraunhofer Institute / /
IndustryTerm
target technology node / exposure tools / field exposure tools / alpha lithography step-and-scan tools / node lithography technology / mask fabrication feasible with current technology / technology development / nm technology node / High volume manufacturing / optical systems / double patterning technology / immersion exposure technology / lithography technology / volume manufacturing / related products / pilot-scale applications / photoresist technology / electronics industry / electronic devices / nm node technology / technology node / limit using immersion exposure technology / exposure tool / exposure systems / mask technology / /
Organization
Fraunhofer Institute for Applied Optics and Precision Engineering / Extreme Ultraviolet Lithography System Development Association / NGL league / National Institute of Standards and Technology / Santa Clara University / University of Central Florida / Association of Super-Advanced Electronics Technologies / Indian Institute of Technology / /
Person
Benjamin G. Eynon / Jr. / Andras Vladar / Richard M. Silver / Ajay Kumar / Henry Kamberian / Bruno La Fontaine / Patrick Naulleau / Banqiu Wu / Martin Richardson / /