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Semiconductor devices / Digital electronics / Integrated circuits / MOSFET / 11 nanometer / Indium gallium arsenide / Gate oxide / International Electron Devices Meeting / Transistor / Electronic engineering / Electronics / Chemistry


[removed]A New Self-Aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process
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Document Date: 2014-04-22 16:21:50


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File Size: 1,52 MB

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