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1700V Bi-Mode Insulated Gate Transistor (BIGT) on Thin Wafer Technology Munaf Rahimo, Jan Vobecky, Chiara Corvasce
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Document Date: 2013-01-14 19:11:35

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City

Orlando / Prague / Barcelona / Lenzburg / Kitakyushu / Naples / /

Company

Chiara Corvasce ABB Switzerland Ltd / ABB Semiconductors / ABB Switzerland Ltd. / IGBT Modules Utilizing Next Generation Chip Technologies / Prague 2010 ABB Switzerland Ltd. / Power Semiconductors / /

Country

Czech Republic / /

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IndustryTerm

metal / thin wafer processing / technology curve / smooth transition into full chip / device processing / higher voltage devices / hard switching applications / voltage devices / energy / /

Person

Chiara Corvasce / Jan Vobecky / Hans-Günter Eckel / /

Position

collector / forward / /

Product

1700V Bi-Mode Insulated Gate Transistor / /

Technology

SOA / laser / Thin Wafer Technology / BIGT technology / BIGT chip / /

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