Meiji University / Nanoelectronics Research Institute National Institute of Advanced Industrial Science / terminal Operation Mode / terminal DG MOSFETs / /
IndustryTerm
200nm long device / carrier velocity saturation / 50nm long device / technology node proceeds / carrier velocity-saturation effect / 50nm-long device / nm long devices / carrier velocity / energy / /
NaturalFeature
Si channel / /
Organization
Meiji University / Nanoelectronics Research Institute National Institute of Advanced Industrial Science and Technology / Department of Computer Science / School of Science and Technology / / /