Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa*, T. Sekigawa*, T. Tsutsumi**, M. Hioki*, E. Suzuki*, and H. Koike* * Electroinformatics Group,

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Date: 2011-11-18 13:54:24 Electrical engineering Semiconductors Short-channel effect Transistor Field-effect transistor Electron mobility Drain Induced Barrier Lowering Channel length modulation Power MOSFET Electronic engineering Technology MOSFET		Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi*, M. Hioki, E. Suzuki, and H. Koike * Electroinformatics Group, Add to Reading List Source URL: www.nsti.org Download Document from Source Website File Size: 164,71 KB Share Document on Facebook

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