![Electrical engineering / Semiconductors / Short-channel effect / Transistor / Field-effect transistor / Electron mobility / Drain Induced Barrier Lowering / Channel length modulation / Power MOSFET / Electronic engineering / Technology / MOSFET Electrical engineering / Semiconductors / Short-channel effect / Transistor / Field-effect transistor / Electron mobility / Drain Induced Barrier Lowering / Channel length modulation / Power MOSFET / Electronic engineering / Technology / MOSFET](https://www.pdfsearch.io/img/53cd4506facdbc6c5a9ffeb6726d6d9d.jpg) Date: 2011-11-18 13:54:24Electrical engineering Semiconductors Short-channel effect Transistor Field-effect transistor Electron mobility Drain Induced Barrier Lowering Channel length modulation Power MOSFET Electronic engineering Technology MOSFET | | Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa*, T. Sekigawa*, T. Tsutsumi**, M. Hioki*, E. Suzuki*, and H. Koike* * Electroinformatics Group,Add to Reading ListSource URL: www.nsti.orgDownload Document from Source Website File Size: 164,71 KBShare Document on Facebook
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