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Drain Induced Barrier Lowering / Technology / Threshold voltage / Field-effect transistor / Multigate device / Work function / Short-channel effect / Charge carriers / Transistors / Electrical engineering / Physics / MOSFET


Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques T. A. Fjeldly *, S. Kolberg* and B. Iñiguez** * UniK – University Graduate Center, Norwegian University of Science and Technol
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Document Date: 2012-06-27 17:07:44


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File Size: 1,58 MB

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